SIC MOSFETS | Status : Active

SICW030N120H4

  • Package Type:TO-247-4
  • Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
  • Category:SIC MOSFETS
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
Gate
Threshold
Voltage
VGS(th) Min
(V)
Gate
Threshold
Voltage
VGS(th) Max (V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single
Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
SICW030N120H4 Single N 1200 -10/+25 78 2 4.5 No 175 2500 349 4909 375 305
Part Number SICW030N120H4 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 1200
Gate-Source
Voltage
VGS (V)
 -10/+25
Drain
Current
ID (A)
 78
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
 
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
 
Gate
Threshold
Voltage
VGS(th) Min
(V)
 2
Gate
Threshold
Voltage
VGS(th) Max (V)
 4.5
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 175
Single
Pulsed
Avalanche
Energy
EAS(mJ)
 2500
Pulsed Drain
Current
IDM(A)
 349

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
SICW030N120H4 Package Type Image TO-247-4 TO-247-4 6.1165 SICW030N120H4

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Reliability Report Soldering Profile Environmental Compliance
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MSL
N/A

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