SIC MOSFETS | Status : Active

SICBG160N120A

  • Package Type:TO-263-7L
  • Packing Info:Tape&Reel: 800pcs/Reel;
  • Category:SIC MOSFETS
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
Gate
Threshold
Voltage
VGS(th) Min
(V)
Gate
Threshold
Voltage
VGS(th) Max (V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single
Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
SICBG160N120A Single N 1200 -5/+22 18 0.16 1.5 3 No 175 216 72 780 116 47
Part Number SICBG160N120A Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 1200
Gate-Source
Voltage
VGS (V)
  -5/+22
Drain
Current
ID (A)
 18
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
 0.16
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
 
Gate
Threshold
Voltage
VGS(th) Min
(V)
 1.5
Gate
Threshold
Voltage
VGS(th) Max (V)
 3
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 175
Single
Pulsed
Avalanche
Energy
EAS(mJ)
 216
Pulsed Drain
Current
IDM(A)
 72

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
SICBG160N120A Package Type Image TO-263-7L TO-263-7L 1.4560 SICBG160N120A Tape&Reel: 800pcs/Reel;

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Reliability Report Soldering Profile Environmental Compliance
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MSL
N/A

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