SIC MOSFETS | Status :
Active
SICBG160N120A
- Package Type:TO-263-7L
- Packing Info:Tape&Reel: 800pcs/Reel;
- Category:SIC MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SICBG160N120A | Single | N | 1200 | -5/+22 | 18 | 0.16 | 1.5 | 3 | No | 175 | 216 | 72 | 780 | 116 | 47 |
| Part Number SICBG160N120A | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 1200 |
Gate-Source Voltage VGS (V) -5/+22 |
Drain Current ID (A) 18 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) 0.16 |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.5 |
Gate Threshold Voltage VGS(th) Max (V) 3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 216 |
Pulsed Drain Current IDM(A) 72 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code | Packing Info |
|---|---|---|---|---|---|
| SICBG160N120A |
TO-263-7L
|
TO-263-7L | 1.4560 | SICBG160N120A | Tape&Reel: 800pcs/Reel; |
Environmental Information 
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| MSL |
|---|
| N/A |
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