SiC MOSFET Modules

MCC SiC MOSFET Modules deliver exceptional performance with high blocking voltage, low conduction and switching losses, high-frequency capability, and reliable high-temperature operation. Built with MCC’s advanced silicon carbide (SiC) MOSFET technology, these modules achieve superior power density for demanding industrial applications — including inverters and converters for railway systems, photovoltaic inverters, energy storage systems, renewable energy solutions, OBC, Charging Station and beyond.

They are offered in Automotive and industry-standard packages, integrate the latest generation of SiC MOSFET chip technologies to ensure optimal efficiency, compact design, and long-term reliability.

Part Number   Status   Compliance Number of
Functions  
Channel   Package Type   Drain-Source
Voltage
VDS (V)  
Gate-Source
Voltage
VGS (V)  
Drain
Current
ID (A)  
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)  
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V  
Gate
Threshold
Voltage
VGS(th) Min (V)  
Gate
Threshold
Voltage
VGS(th) Max (V)  
Inverse Diode
Forward Voltage
VSD (V)  
Single
Pulsed
Avalanche
Energy
EAS(mJ)  
Pulsed Drain
Current
IDM(A)  
Junction
Temperature
Tj [max]
(°C)