SIC MOSFETS | Status : Active

SICW080N120Y

  • Package Type:TO-247
  • Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
  • Category:SIC MOSFETS
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
Gate
Threshold
Voltage
VGS(th) Min
(V)
Gate
Threshold
Voltage
VGS(th) Max (V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single
Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
SICW080N120Y Single N 1200 -8/+22 38 0.085 2.3 3.6 No 175 80 890 220 41
Part Number SICW080N120Y Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 1200
Gate-Source
Voltage
VGS (V)
  -8/+22
Drain
Current
ID (A)
 38
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
 0.085
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
 
Gate
Threshold
Voltage
VGS(th) Min
(V)
 2.3
Gate
Threshold
Voltage
VGS(th) Max (V)
 3.6
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 175
Single
Pulsed
Avalanche
Energy
EAS(mJ)
 
Pulsed Drain
Current
IDM(A)
 80

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
SICW080N120Y TO-247 TO-247 5.6000 SICW080N120Y

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Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report MSL
Tin Whisker Test Report N/A

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