SIC MOSFETS | Status : Active

SICW1000N170A

  • Package Type:TO-247AB
  • Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
  • Category:SIC MOSFETS
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
Gate
Threshold
Voltage
VGS(th) Min
(V)
Gate
Threshold
Voltage
VGS(th) Max (V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single
Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
SICW1000N170A Single N 1700 -5/+25 3 1.37 1.48 2.5 4.5 No 150 12 124 69 15.5
Part Number SICW1000N170A Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 1700
Gate-Source
Voltage
VGS (V)
  -5/+25
Drain
Current
ID (A)
 3
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)
 1.37
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)
 1.48
Gate
Threshold
Voltage
VGS(th) Min
(V)
 2.5
Gate
Threshold
Voltage
VGS(th) Max (V)
 4.5
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150
Single
Pulsed
Avalanche
Energy
EAS(mJ)
 
Pulsed Drain
Current
IDM(A)
 12

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
SICW1000N170A TO-247AB TO-247AB 5.6000 SICW1000N170A

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MSL
N/A