Power MOSFETS | Status :
Active
MCU45N10
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU45N10 | Single | N | 100 | ±20 | 45 | 0.017 | 0.0215 | 1 | 3 | No | 150 | 81 | 180 | 1165 | 265 | 72 | 20 | 4.5 |
| Part Number MCU45N10 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 45 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.017 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.0215 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 81 |
Pulsed Drain Current IDM(A) 180 |
Packing Information
Environmental Information 
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