Power MOSFETS | Status :
Active
MCP60P06
- Package Type:TO-220AB(H)
- Packing Info:Bulk;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCP60P06 | Single | P | -60 | ±20 | -60 | 0.018 | -2 | -3.5 | No | 175 | 722 | -240 | 6504 | 360 | 113 | 26 |
Part Number MCP60P06 | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -60 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.018 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -2 |
Gate Threshold Voltage VGS(th) Max (V) -3.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 722 |
Pulsed Drain Current IDM(A) -240 |
Packing Information
Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
---|---|---|---|---|
MCP60P06 | TO-220AB(H) | TO-220AB(H) | 1.9469 | MCP60P06 |
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