Power MOSFETS | Status :
Active
Datasheet
ECAD Model
MCG65N03
- Package Type:DFN3333
- Packing Info: Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Gate Threshold Voltage VGS(th) Min (V) |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCG65N03 | Single | N | 30 | ±20 | 65 | 0.0032 | 0.004 | 2.5 | No | 1 | 4498 | 800 | 75 | 92.7 | 22.8 |
Part Number MCG65N03 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 30 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 65 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0032 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.004 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Package
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